| PART |
Description |
Maker |
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MHR10HUAS MHR14HUAS MHR16HUAS MHR20HUAS MHR24HUAS |
.100 LATCH HEADER .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| FCS26SG FCS62SG FCS44SG FCS24SG FCS60SG |
.100 IDC SOCKET .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| MHF64SGL MHF64SGS MHF26SGL MHF26SGS |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
| MHR |
.100 LATCH HEADER .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| NSBA123JF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143Z |
BRT, PNP, 50 V, 100 mA, 100 k, none, SOT-1123 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Digital Transistors (BRT)
|
ON Semiconductor
|
| M100UFG M160UFG M25UFG M50UFG |
2,500 V - 16,000 V Rectifiers 10 mA - 100 mA Forward Current 100 ns Recovery Time
|
Voltage Multipliers Inc.
|
| GT-48207 GT-48208 GT-48212 |
Advanced Switched Ethernet Controllers for 10 10/100 BaseX(高级交换10 10/100 BaseX以太网控制器)
|
Galileo Technology Services, LLC
|
| M160UFG |
16000 V rectifier 10-100 mA forward current,100 ns recovery time
|
Voltage Multipliers
|
| NMA5107-B1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
http://
|
